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dc.contributor.author |
Makara, V.A. |
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dc.contributor.author |
Steblenko, L.P. |
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dc.contributor.author |
Kolchenko, Yu.L. |
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dc.contributor.author |
Naumenko, S.M. |
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dc.contributor.author |
Lisovsky, I.P. |
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dc.contributor.author |
Mazunov, D.O. |
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dc.contributor.author |
Mokliak, Yu.Yu. |
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dc.date.accessioned |
2017-06-14T11:01:37Z |
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dc.date.available |
2017-06-14T11:01:37Z |
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dc.date.issued |
2006 |
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dc.identifier.citation |
Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals / V.A. Makara, L.P. Steblenko, Yu.L. Kolchenko, S.M. Naumenko, I.P. Lisovsky, D.O. Mazunov, Yu.Yu. Mokliak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 1-3. — Бібліогр.: 9 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS 81.40.-z |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/121440 |
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dc.description.abstract |
IR spectroscopy study is indicative of the change in the relative concentration of interstitial oxygen in silicon monocrystals after their treatment by using the magnetic field. This is an evidence of a considerable effect of magnetic field on the defect structure of the investigated crystals. |
uk_UA |
dc.description.sponsorship |
This work was partially supported by Joint
fundamental investigations project of State Fund of
fundamental investigations of Ukraine and Belarussian
Republican Fund of fundamental investigations “DFFD–
BRFFD–2005” (project No 10.01/008). |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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