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Photo-induced effects in (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films and multilayers with gold nanoparticles
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 4
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Photo-induced effects in (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films and multilayers with gold nanoparticles
Інший ID:
DOI: 10.15407/spqeo18.04.385
PACS 42.70.Gi, 68.65.Ac, 81.15.Fg
PACS 42.70.Gi, 68.65.Ac, 81.15.Fg
Посилання:
Photo-induced effects in (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films and multilayers with gold nanoparticles / Yu.Yu. Neimet, I.P. Studenyak, M.Yu. Buchuk, R. Bohdan, S. Kökényesi, L. Daróci, P. Nemec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 385-390. — Бібліогр.: 17 назв. — англ.
Підтримка:
Mykhailo Buchuk (contract number 51501900) is very much grateful to the International Visegrad Fund scholarship for funding the study.
Дата:
2015
Переглядів:
664
Завантажень:
347
Анотація:
(Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ single layer thin films, as well as ones deposited onto glass substrates previously covered with gold nanoparticle (GNP) layers were studied. Conventional thermal evaporation and pulse laser deposition techniques were used to deposit chalcogenide films onto previously prepared GNP layer. Roughness analysis of as-deposited film surfaces was performed. The influence of laser (LI) and e-beam (EBI) irradiation on structural and optical properties was analysed. Single layer films as well as sandwich structures with GNP on their base were found to be sensitive to LI and EBI. Irradiations caused growth of additional structures at films surfaces which was enhanced by a presence of gold.
