Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Formation and evolution of intermixing zones in C/Si multilayer under heating
Репозиторій DSpace/Manakin
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Formation and evolution of intermixing zones in C/Si multilayer under heating
Тема:
Characterization and properties
УДК:
DOI: dx.doi.org/10.15407/fm21.03.318
Посилання:
Formation and evolution of intermixing zones in C/Si multilayer under heating / I.A. Zhuravel, Ye.A. Bugayev, A.V. Penkov, E.N. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Functional Materials. — 2014. — Т. 21, № 3. — С. 318-323. — Бібліогр.: 16 назв. — англ.
Дата:
2014
Переглядів:
839
Завантажень:
516
Анотація:
Formation of intermixing zones, their structure and phase composition in C/Si multilayers in as-deposited state and after annealing are studied. During deposition intermixing zones of ∼ 0.6 m thick are formed at both silicon/carbon and carbon/silicon interfaces. The zone formed at C-on-Si interlayer is denser than adjacent zone due to amorphous SiC nucleation. Both the thickness and the densities of intermixing zones increase with annealing temperature up to 800°C. Silicon carbide is revealed in Si-on-C zone at 700°C. Structure of the zones is still amorphous at 950°C.
