Formation and evolution of intermixing zones in C/Si multilayer under heating

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізико-технічних проблем матеріалознавства
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Functional Materials
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Functional Materials, 2014, том 21
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Functional Materials, 2014, № 3
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Formation and evolution of intermixing zones in C/Si multilayer under heating

Zhuravel, I.A. ; Bugayev, Ye.A. ; Penkov, A.V. ; Zubarev, E.N. ; Sevryukova, V.A. ; Kondratenko, V.V.

Тема: Characterization and properties

УДК: DOI: dx.doi.org/10.15407/fm21.03.318

URI: http://dspace.nbuv.gov.ua/handle/123456789/120462

Посилання: Formation and evolution of intermixing zones in C/Si multilayer under heating / I.A. Zhuravel, Ye.A. Bugayev, A.V. Penkov, E.N. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Functional Materials. — 2014. — Т. 21, № 3. — С. 318-323. — Бібліогр.: 16 назв. — англ.

Дата: 2014

Завантажень: 473

Formation and evolution of intermixing zones in C/Si multilayer under heating

Анотація:

Formation of intermixing zones, their structure and phase composition in C/Si multilayers in as-deposited state and after annealing are studied. During deposition intermixing zones of ∼ 0.6 m thick are formed at both silicon/carbon and carbon/silicon interfaces. The zone formed at C-on-Si interlayer is denser than adjacent zone due to amorphous SiC nucleation. Both the thickness and the densities of intermixing zones increase with annealing temperature up to 800°C. Silicon carbide is revealed in Si-on-C zone at 700°C. Structure of the zones is still amorphous at 950°C.

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