Formation and evolution of intermixing zones in C/Si multilayer under heating

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Фізико-технічні та математичні науки
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Відділення фізико-технічних проблем матеріалознавства
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Functional Materials
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Functional Materials, 2014, том 21
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Functional Materials, 2014, № 3
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dc.contributor.author	Zhuravel, I.A.
dc.contributor.author	Bugayev, Ye.A.
dc.contributor.author	Penkov, A.V.
dc.contributor.author	Zubarev, E.N.
dc.contributor.author	Sevryukova, V.A.
dc.contributor.author	Kondratenko, V.V.
dc.date.accessioned	2017-06-12T07:55:05Z
dc.date.available	2017-06-12T07:55:05Z
dc.date.issued	2014
dc.identifier.citation	Formation and evolution of intermixing zones in C/Si multilayer under heating / I.A. Zhuravel, Ye.A. Bugayev, A.V. Penkov, E.N. Zubarev, V.A. Sevryukova, V.V. Kondratenko // Functional Materials. — 2014. — Т. 21, № 3. — С. 318-323. — Бібліогр.: 16 назв. — англ.	uk_UA
dc.identifier.issn	1027-5495
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120462
dc.description.abstract	Formation of intermixing zones, their structure and phase composition in C/Si multilayers in as-deposited state and after annealing are studied. During deposition intermixing zones of ∼ 0.6 m thick are formed at both silicon/carbon and carbon/silicon interfaces. The zone formed at C-on-Si interlayer is denser than adjacent zone due to amorphous SiC nucleation. Both the thickness and the densities of intermixing zones increase with annealing temperature up to 800°C. Silicon carbide is revealed in Si-on-C zone at 700°C. Structure of the zones is still amorphous at 950°C.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	НТК «Інститут монокристалів» НАН України	uk_UA
dc.relation.ispartof	Functional Materials
dc.subject	Characterization and properties	uk_UA
dc.title	Formation and evolution of intermixing zones in C/Si multilayer under heating	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA
dc.identifier.udc	DOI: dx.doi.org/10.15407/fm21.03.318