Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2
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Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 4
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Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties

Atroshchenko, L.V. ; Galkin, S.N. ; Galchinetskii, L.P. ; Lalayants, A.I. ; Rybalka, I.A. ; Ryzhikov, V.D. ; Silin, V.I. ; Starzhinskii, N.G.

Інший ID: PACS: 72.20, 78.30.A, F, 81.05.C, D, E, G, H

URI: http://dspace.nbuv.gov.ua/handle/123456789/120259

Посилання: Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties / L.V. Atroshchenko, S.N. Galkin, L.P. Gal’chinetskii, A.I. Lalayants, I.A. Rybalka, V.D. Ryzhikov, V.I. Silin, N.G. Starzhinskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 81-85. — Бібліогр.: 5 назв. — англ.

Підтримка: The authors are grateful to Dr.V. Kutniy and Dr.A. Rybka for their having taken part in discussion of the results of this work. This work was carried out with financial support of the Lawrence Livermore National Laboratory

Дата: 1999

Завантажень: 331

Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties

Анотація:

Relationship between preparation conditions of the raw charge, crucible material, growth regimes and structure defectness and electrophysical properties of crystals Cd₁₋x ZnxTe has been studied. The crystals were grown both from the raw material which had been pre-synthesized in quartz ampoules and from the raw material synthesized from the elements directly in the growth furnace. It is shown that the best values of electric resistivity ρ (up to 10¹¹ Ohm⋅cm) and sensitivity to X-ray and gamma-radiation are obtained for crystals grown in crucibles of highly pure coal-graphite material from the pre-synthesized raw charge. Correlation has been established between values of ρ and crystal defectness: decrease of dislocation density by 10⁴ times led to 10⁷ times higher values of resistivity. Concentration of dislocation etching pits regularly decreased with higher purity of the raw material and optimization of crystal preparation technology.

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