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Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 1
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Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution
Інший ID:
PACS: 36.40. M, 61.66, 61.72. T, 68.65
Посилання:
Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution / P.A. Selishchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 19-21. — Бібліогр.: 10 назв. — англ.
Підтримка:
The author are grateful to O.A. Leontev for his contributuions to technical providing the work.
Дата:
2000
Переглядів:
740
Завантажень:
399
Анотація:
Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution of oxygen and its complexes. It is shown that due to the interaction of oxygen interstitials and their complexes the homogeneous state becomes unstable at some conditions, and spatial periodical distribution develops. Its period lies in the range of 10-1000 Å .
