Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 1
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dc.contributor.author	Selishchev, P.A.
dc.date.accessioned	2017-06-11T13:17:47Z
dc.date.available	2017-06-11T13:17:47Z
dc.date.issued	2000
dc.identifier.citation	Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution / P.A. Selishchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 19-21. — Бібліогр.: 10 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 36.40. M, 61.66, 61.72. T, 68.65
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120230
dc.description.abstract	Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution of oxygen and its complexes. It is shown that due to the interaction of oxygen interstitials and their complexes the homogeneous state becomes unstable at some conditions, and spatial periodical distribution develops. Its period lies in the range of 10-1000 Å .	uk_UA
dc.description.sponsorship	The author are grateful to O.A. Leontev for his contributuions to technical providing the work.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA