The distribution of field-induced charges in C₆₀ fullerite

The distribution of field-induced charges in C₆₀ fullerite

Kuprievich, V.A. ; Kapitanchuk, O.L. ; Shramko, O.V. ; Kudritska, Z.G.

Тема: Низкоразмерные и неупорядоченные системы

Інший ID: PACS: 71.10.–w, 31.25.Eb, 73.90.+f

URI: http://dspace.nbuv.gov.ua/handle/123456789/120055

Посилання: The distribution of field-induced charges in C₆₀ fullerite / V.A. Kuprievich, O.L. Kapitanchuk, O.V. Shramko, Z.G. Kudritska // Физика низких температур. — 2006. — Т. 32, № 1. — С. 125-128. — Бібліогр.: 16 назв. — рос.

Підтримка: The authors are thankful to Prof. V. Loktev and Prof. E. Petrov for useful discussions. This work was partially supported under contract of the Ukrainian Scientific Program «Nanostructures, Nanomaterials and Nanotechnologies» (project No. 8/05—H).

Дата: 2006

Завантажень: 670

The distribution of field-induced charges in C₆₀ fullerite

Анотація:

The profile of injected charges in a C₆₀-based field-effect transistor (FET) is considered. A simple scheme for calculations of the charge distribution between the 2D layers of C₆₀ molecules is founded on a small magnitude of the interball electron hopping. Analytical solutions of the equations for the charge distributions are obtained in the limits of thick and thin crystals. The charge density is shown to drop exponentially with the crystal depth. The calculations predict the relative part of induced charges involved in the surface layer to be 3/4 and 2/3 in the cases of electron and hole injection, respectively.

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