The distribution of field-induced charges in C₆₀ fullerite

dc.contributor.author	Kuprievich, V.A.
dc.contributor.author	Kapitanchuk, O.L.
dc.contributor.author	Shramko, O.V.
dc.contributor.author	Kudritska, Z.G.
dc.date.accessioned	2017-06-10T19:51:57Z
dc.date.available	2017-06-10T19:51:57Z
dc.date.issued	2006
dc.identifier.citation	The distribution of field-induced charges in C₆₀ fullerite / V.A. Kuprievich, O.L. Kapitanchuk, O.V. Shramko, Z.G. Kudritska // Физика низких температур. — 2006. — Т. 32, № 1. — С. 125-128. — Бібліогр.: 16 назв. — рос.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 71.10.–w, 31.25.Eb, 73.90.+f
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120055
dc.description.abstract	The profile of injected charges in a C₆₀-based field-effect transistor (FET) is considered. A simple scheme for calculations of the charge distribution between the 2D layers of C₆₀ molecules is founded on a small magnitude of the interball electron hopping. Analytical solutions of the equations for the charge distributions are obtained in the limits of thick and thin crystals. The charge density is shown to drop exponentially with the crystal depth. The calculations predict the relative part of induced charges involved in the surface layer to be 3/4 and 2/3 in the cases of electron and hole injection, respectively.	uk_UA
dc.description.sponsorship	The authors are thankful to Prof. V. Loktev and Prof. E. Petrov for useful discussions. This work was partially supported under contract of the Ukrainian Scientific Program «Nanostructures, Nanomaterials and Nanotechnologies» (project No. 8/05—H).	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	Низкоразмерные и неупорядоченные системы	uk_UA
dc.title	The distribution of field-induced charges in C₆₀ fullerite	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA