Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 4
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Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates
Інший ID:
PACS 73.50.Pz, 73.63.-b
Посилання:
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates / І.B. Olenych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 382-385. — Бібліогр.: 16 назв. — англ.
Підтримка:
The author thanks to Prof. L.S. Monastyrskii, Dr.
B.S. Sokolovskii and Prof. O.I. Aksimentyeva for
discussion of the results
Дата:
2012
Переглядів:
766
Завантажень:
424
Анотація:
Current-voltage characteristics, spectral dependences of photovoltage and
short-circuit current of the structures based on porous silicon at adsorption of iodine
molecules are presented. It is revealed widening the spectral range of photosensitivity in
the samples in short-wavelength range as compared with that of single crystal silicon.
Kinetics of the photovoltage response inherent to the porous silicon-silicon structures has
been investigated. The results are explained in the frame of qualitative model that
involves formation of p-n-transitions in these structures as a result of inversion of the
conductivity type in porous silicon nanocrystals under the influence of adsorption of
molecular iodine
