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dc.contributor.author |
Olenych, І.B. |
|
dc.date.accessioned |
2017-05-31T05:26:19Z |
|
dc.date.available |
2017-05-31T05:26:19Z |
|
dc.date.issued |
2012 |
|
dc.identifier.citation |
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates / І.B. Olenych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 382-385. — Бібліогр.: 16 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 73.50.Pz, 73.63.-b |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118731 |
|
dc.description.abstract |
Current-voltage characteristics, spectral dependences of photovoltage and
short-circuit current of the structures based on porous silicon at adsorption of iodine
molecules are presented. It is revealed widening the spectral range of photosensitivity in
the samples in short-wavelength range as compared with that of single crystal silicon.
Kinetics of the photovoltage response inherent to the porous silicon-silicon structures has
been investigated. The results are explained in the frame of qualitative model that
involves formation of p-n-transitions in these structures as a result of inversion of the
conductivity type in porous silicon nanocrystals under the influence of adsorption of
molecular iodine |
uk_UA |
dc.description.sponsorship |
The author thanks to Prof. L.S. Monastyrskii, Dr.
B.S. Sokolovskii and Prof. O.I. Aksimentyeva for
discussion of the results |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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