Optical properties and structure of As-Ge-Se thin films

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 3
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Optical properties and structure of As-Ge-Se thin films

Tolmachov, I.D. ; Stronski, A.V. ; Vlcek, M.

Інший ID: PACS 42.70.Mp, 64.75.St, 78.66.-w

URI: http://dspace.nbuv.gov.ua/handle/123456789/118404

Посилання: Optical properties and structure of As-Ge-Se thin films / I.D. Tolmachov, A.V. Stronski, M. Vlcek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С.276-279. — Бібліогр.: 14 назв. — англ.

Дата: 2010

Завантажень: 411

Optical properties and structure of As-Ge-Se thin films

Анотація:

Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅ have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk glasses and films were investigated by Raman spectroscopy. Both films are estimated to have high values of the nonlinear refractive index.

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