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Growth of a KDP (KH₂PO₄) twin crystal and comparison of its characteristics with a single crystal
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 3
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Growth of a KDP (KH₂PO₄) twin crystal and comparison of its characteristics with a single crystal
Інший ID:
PACS 42.70.Mp, 77.84.Fa, 81.10.Dn
Посилання:
Growth of a KDP (KH₂PO₄) twin crystal and comparison of its characteristics with a single crystal / S. Javidi, M. Esmaeil Nia, N. Ali Akbari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 302-304. — Бібліогр.: 7 назв. — англ.
Підтримка:
The author acknowledges M. Molayem for providing
spectrometry curves, H. Kalbasi for providing
microhardness testing, and N. Afshari for providing
XRD curves.
Дата:
2010
Переглядів:
783
Завантажень:
351
Анотація:
KDP single and twin (prepared from two-glued seeds) crystals have been
grown by the method of temperature reduction. Then, the grown crystals were cut and
polished in the (100) direction for optical characterization. The transmission spectra and
XRD analysis of the crystals were determined and compared. The Vickers microhardness
tests carried out on the two types showed that duplication of the crystal lattice did not
reduce the hardness of it.
