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Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 1
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Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe
Інший ID:
PACS 73.21.Fg, 84.40.-x
Посилання:
Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe / E.O. Melezhik, J.V. Gumenjuk-Sichevska, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 85-96. — Бібліогр.: 45 назв. — англ.
Дата:
2014
Переглядів:
738
Завантажень:
576
Анотація:
Electron relaxation processes at nitrogen temperatures in CdTe/Hg₁₋xCdxTe/CdTe quantum well (QW) with an inverted band structure is modelled. In this
structure, scattering by longitudinal optical phonons, charged impurities, acoustic phonons
and interfaces were taken into account. It was found that for undoped and lightly doped
QWs (concentration of background n-type charged impurities in the well is 10¹⁴ – 10¹⁶ cm-³
or less), for x close to the band inversion value 0.16, the electron mobility grows
considerably when the QW width decreases. This mobility is higher for samples with
smaller concentrations of charged impurities.
