Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15
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Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 3
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Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals

Studenyak, I.P. ; Kranjčec, M. ; Bilanchuk, V.V. ; Dziaugys, A. ; Banys, J. ; Orliukas, A.F.

Інший ID: PACS 77.80.Bh, 78.40.Ha

URI: http://dspace.nbuv.gov.ua/handle/123456789/118317

Посилання: Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals / I.P. Studenyak, M. Kranjcec, V.V. Bilanchuk, A. Dziaugys, J. Banys, A.F. Orliukas // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 227-231. — Бібліогр.: 17 назв. — англ.

Дата: 2012

Завантажень: 323

Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals

Анотація:

Electrical conductivity of Cu₇(Ge₁₋xSix)S₅I mixed crystals was measured in the frequency range 1.0x10⁶ –1.2x10⁹ Hz and in the temperature interval 100–300 K. The frequency and temperature behaviour of the electrical conductivity were analyzed. The optical absorption edge of Cu₇(Ge₁₋xSix)S₅I mixed crystals within the temperature range 77–300 K was studied. The compositional dependences of the electrical conductivity, activation energy, optical pseudogap and Urbach energy were obtained. The influence of Ge→Si cation substitution on the optical absorption processes in the Cu₇(Ge₁₋xSix)S₅I mixed crystals is investigated.

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