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dc.contributor.author |
Studenyak, I.P. |
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dc.contributor.author |
Kranjčec, M. |
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dc.contributor.author |
Bilanchuk, V.V. |
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dc.contributor.author |
Dziaugys, A. |
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dc.contributor.author |
Banys, J. |
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dc.contributor.author |
Orliukas, A.F. |
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dc.date.accessioned |
2017-05-29T17:37:19Z |
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dc.date.available |
2017-05-29T17:37:19Z |
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dc.date.issued |
2012 |
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dc.identifier.citation |
Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals / I.P. Studenyak, M. Kranjcec, V.V. Bilanchuk, A. Dziaugys, J. Banys, A.F. Orliukas // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 227-231. — Бібліогр.: 17 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS 77.80.Bh, 78.40.Ha |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118317 |
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dc.description.abstract |
Electrical conductivity of Cu₇(Ge₁₋xSix)S₅I mixed crystals was measured in the frequency range 1.0x10⁶ –1.2x10⁹ Hz and in the temperature interval 100–300 K. The frequency and temperature behaviour of the electrical conductivity were analyzed. The optical absorption edge of Cu₇(Ge₁₋xSix)S₅I mixed crystals within the temperature range 77–300 K was studied. The compositional dependences of the electrical conductivity, activation energy, optical pseudogap and Urbach energy were obtained. The influence of Ge→Si cation substitution on the optical absorption processes in the Cu₇(Ge₁₋xSix)S₅I mixed crystals is investigated. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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