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Current transport mechanisms in metal – high-k dielectric – silicon structures
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 2
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Current transport mechanisms in metal – high-k dielectric – silicon structures
Інший ID:
PACS 73.20.-r
Посилання:
Current transport mechanisms in metal – high-k
dielectric – silicon structures / Y.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 139-146. — Бібліогр.: 35 назв. — англ.
Підтримка:
This work has been partly funded by the National
Academy of Sciences of Ukraine in frames of the
Complex Program of Fundamental Research
“Nanosystems, nanomaterials and nanotechnologies”,
project No. 53/ 32 /11 - H . Author is grateful to
M.C. Lemme, H.J. Osten, A. Laha, P.K. Hurley,
K. Cherkaoui, S. Monaghan, H.D.B. Gottlob, and
M. Schmidt for providing the samples for measurements,
and to V.S. Lysenko and A.N. Nazarov for useful
discussions and valuable comments.
Дата:
2012
Переглядів:
816
Завантажень:
533
Анотація:
The mechanism of current transport in several high k -dielectric, including
rare earth metal oxides (Gd₂O₃, Nd₂O₃), ternary compounds (LaLuO₃) and rare earth
metal silicate (LaSiOx) thin films on silicon was studied using current-voltage ( I - V )
and conductance-frequency measurements at temperatures 100-300 K. It was
shown that the current through the dielectric layer is controlled either by Pool-Frenkel
mechanism of trap-assisted tunneling or by Mott’s variable range hopping conductance
through the localized states near the Fermi level. From the results of measurements, the
dynamic dielectric constant k of the material, energy positions and bulk concentrations of
traps inside the dielectric layers were determined.
