Наукова електронна бібліотека
періодичних видань НАН України

Current transport mechanisms in metal – high-k dielectric – silicon structures

Репозиторій DSpace/Manakin

Показати простий запис статті

dc.contributor.author Gomeniuk, Y.V.
dc.date.accessioned 2017-05-29T14:47:49Z
dc.date.available 2017-05-29T14:47:49Z
dc.date.issued 2012
dc.identifier.citation Current transport mechanisms in metal – high-k dielectric – silicon structures / Y.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 139-146. — Бібліогр.: 35 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 73.20.-r
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118283
dc.description.abstract The mechanism of current transport in several high k -dielectric, including rare earth metal oxides (Gd₂O₃, Nd₂O₃), ternary compounds (LaLuO₃) and rare earth metal silicate (LaSiOx) thin films on silicon was studied using current-voltage ( I - V ) and conductance-frequency measurements at temperatures 100-300 K. It was shown that the current through the dielectric layer is controlled either by Pool-Frenkel mechanism of trap-assisted tunneling or by Mott’s variable range hopping conductance through the localized states near the Fermi level. From the results of measurements, the dynamic dielectric constant k of the material, energy positions and bulk concentrations of traps inside the dielectric layers were determined. uk_UA
dc.description.sponsorship This work has been partly funded by the National Academy of Sciences of Ukraine in frames of the Complex Program of Fundamental Research “Nanosystems, nanomaterials and nanotechnologies”, project No. 53/ 32 /11 - H . Author is grateful to M.C. Lemme, H.J. Osten, A. Laha, P.K. Hurley, K. Cherkaoui, S. Monaghan, H.D.B. Gottlob, and M. Schmidt for providing the samples for measurements, and to V.S. Lysenko and A.N. Nazarov for useful discussions and valuable comments. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Current transport mechanisms in metal – high-k dielectric – silicon structures uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA

Файли у цій статті

Ця стаття з'являється у наступних колекціях

Показати простий запис статті


Розширений пошук


Мій обліковий запис