Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3
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Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals

Інший ID: PACS 61.80.-x, 72.40.+w, 78.55

URI: http://dspace.nbuv.gov.ua/handle/123456789/117763

Посилання: Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals single crystals / T.B. Taghiyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 362-364. — Бібліогр.: 10 назв. — англ.

Дата: 2011

Завантажень: 340

Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals

Анотація:

The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single crystals was studied. When analyzing the experimental data it was established that after doping with the rare-earth element erbium N = 10¹⁸ cm⁻³ and γ-radiation the photoconductivity value and the intensity of photoluminescence radiation increased in the investigated samples. A defect-formation model explaining the observed characteristics was proposed.

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