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Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1
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Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2
Інший ID:
PACS 73.61.Cw, Ng
Посилання:
Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 / S.V. Bunak, A.A. Buyanin, V.V. Ilchenko, V.V. Marin, V.P. Melnik, I.M. Khacevich, O.V. Tretyak, A.G. Shkavro // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 12-18. — Бібліогр.: 19 назв. — англ.
Дата:
2010
Переглядів:
723
Завантажень:
324
Анотація:
The theoretical and experimental investigations of electrical properties of the
SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have
been carried out. The influence of Si cluster growth conditions on frequency
dependences of C - V characteristics, static and dynamic conductance of investigated
structures has been clearly observed. As a result of theoretical modeling, C - V
dependences have been calculated. The experimentally obtained negative constituent of
differential capacitance has been qualitatively described. It has been experimentally
found that the SiO₂/Si-ncs/SiO₂/Si structures with the tunnel dielectric layer revealed the
effect of memorizing.
