The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
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Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 2
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The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system

Rubish, V.M. ; Bih, L. ; Mykaylo, O.A. ; Gorina, O.V. ; Maryan, V.M. ; Gasinets, S.M. ; Solomon, A.M. ; Lazor, P. ; Kostyukevych, S.O.

Інший ID: PACS 61.43.Fs, 61.46.Bc, 78.30.Ly

URI: http://dspace.nbuv.gov.ua/handle/123456789/117678

Посилання: The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system / V.M. Rubish, L. Bih, O.A. Mykaylo, O.V. Gorina, V.M. Maryan, S.M. Gasinets, A.M. Solomon, P. Lazor, S.O. Kostyukevych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 123-127. — Бібліогр.: 27 назв. — англ.

Дата: 2013

Завантажень: 337

The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system

Анотація:

(As₂S₃)₁₀₀₋x(SbSI)x (x = 80 and 90) glasses were prepared by cooling homogenized melts from 720…750 K in cold water. Their structure and structural changes under heat treatment of glasses are confirmed by studies of micro-Raman scattering and X-ray diffraction. In the matrix of these glasses, we observed SbSI nanocrystalline inclusions. It has been shown that the sizes of crystalline inclusions are dependent on the heat treatment regimes.

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