Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
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Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 1
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Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions

Tetyorkin, V.V. ; Sukach, A.V. ; Tkachuk, A.I. ; Movchan, S.P.

Інший ID: PACS 73.40.-c, 73.61.Ga, 78.30.Fs

URI: http://dspace.nbuv.gov.ua/handle/123456789/117663

Посилання: Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 59-63. — Бібліогр.: 22 назв. — англ.

Дата: 2013

Завантажень: 470

Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions

Анотація:

Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to be the space-charge-limited current. The photovoltaic response in the long-wave infrared region with the half-peak cut-off wavelength ranged from 8.0 to 9.0 m was observed in these heterojunctions for the first time. The possible mechanism of the photoresponse is the internal photoemission of holes from p-PbTe across the heterojunction barrier.

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