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dc.contributor.author |
Tetyorkin, V.V. |
|
dc.contributor.author |
Sukach, A.V. |
|
dc.contributor.author |
Tkachuk, A.I. |
|
dc.contributor.author |
Movchan, S.P. |
|
dc.date.accessioned |
2017-05-26T06:00:07Z |
|
dc.date.available |
2017-05-26T06:00:07Z |
|
dc.date.issued |
2013 |
|
dc.identifier.citation |
Injection current and infrared photosensitivity
in isotype p-PbTe/p-CdTe heterojunctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 59-63. — Бібліогр.: 22 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS 73.40.-c, 73.61.Ga, 78.30.Fs |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/117663 |
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dc.description.abstract |
Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by
using the hot-wall epitaxy technique. The growth details are presented. The carrier
transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to be the space-charge-limited
current. The photovoltaic response in the long-wave infrared region with the half-peak
cut-off wavelength ranged from 8.0 to 9.0 m was observed in these heterojunctions for
the first time. The possible mechanism of the photoresponse is the internal photoemission of holes from p-PbTe across the heterojunction barrier. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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