Перегляд за автором "Madatov, R.S."

Результати 1-7 з 7

Control of the electrophysical characteristics of two-barrier silicon structures with a nanostructured base using gamma radiation

Madatov, R.S.; Abasov, F.P.; Asadov, F.G. (Problems of Atomic Science and Technology, 2023)

During this experimental study, samples of double-barrier structures were irradiated with various doses from a ⁶⁰Co source. The current-voltage characteristics of two-barrier structures from a silicon-based nanostructured ...
Injection currents in lamellar crystals of gallium telluride

Madatov, R.S.; Tagiyev, T.B.; Gabulov, I.A.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)

The results of researches of electrical properties and injection currents in lamellar samples of p-type gallium telluride with the purpose of determination of charge transfer mechanism both in the Ohm law regime and in the ...
IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals

Pashayev, A.M.; Tagiyev, B.G.; Madatov, R.S.; Gadzhieva, N.N.; Aliev, A.A.; Asadov, F.G. (Вопросы атомной науки и техники, 2019)

For the first time, information on the surface relief of the layered GaS and doped GaS:Yb single crystals subjected to gamma-irradiation was obtained using atomic force microscopy (AFM) and Fourier-transform infrared ...
Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals

Tagiyev, B.G.; Madatov, R.S.; Aydayev, F.Sh.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er³⁺ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge ...
Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta

Madatov, R.S.; Tagiyev, B.G.; Najafov, A.I.; Tagiyev, T.B.; Gabulov, I.A.; Shakili, Sh.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)

The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the ...
Photoluminescence of undoped and Yb-doped GaS single crystals irradiated with γ-quanta

Madatov, R.S.; Tagiyev, T.B.; Khaligzadeh, A.Sh. (Вопросы атомной науки и техники, 2021)

The infuence of γ-radiation with a dose Dγ = 140 krad on the photoluminescence of Yb-doped GaS single crystals was investigated. Based on the analysis of the experimental results, it is concluded that the doping of the ...
Radiation modification of the structure of layer crystals of sulfide gallium

Madatov, R.S.; Gadzhieva, N.N.; Asadov, F.G.; Asadova, Z.I. (Вопросы атомной науки и техники, 2018)

he radiation modification of the structure of a layered GaS crystal by the Fourier-IR and Raman spectroscopy methods in the absorbed dose (Фγ = 30…200 krad) of gamma-irradiation was studied. It was established that ...

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Перегляд за автором "Madatov, R.S."

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Перегляд за автором "Madatov, R.S."

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