Перегляд за автором "Vainberg, V.V."

Сортувати за: Порядок: Результатів:

  • Electron mobility in the GaAs/InGaAs/GaAs quantum wells 
    Vainberg, V.V.; Pylypchuk, A.S.; Baidus, N.V.; Zvonkov, B.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two types of sample doping – in the quantum well and in the ...
  • Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells 
    Gudenko1, Yu.M.; Vainberg, V.V.; Poroshin, V.M.; Tulupenko, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The drift of charge carriers in the p-Si₀.₈₈Ge₀.₁₂/Si heterostructures under strong lateral electric fields and conditions of carrier generation by the band-to-band light absorption has been investigated experimentally. ...