Gudenko1, Yu.M.; Vainberg, V.V.; Poroshin, V.M.; Tulupenko, V.M.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
The drift of charge carriers in the p-Si₀.₈₈Ge₀.₁₂/Si heterostructures under strong
lateral electric fields and conditions of carrier generation by the band-to-band light
absorption has been investigated experimentally. ...