Перегляд за автором "Tretyak, O.V."

Сортувати за: Порядок: Результатів:

  • Effect of pressure on intersystem transitions in aromatic amine molecules 
    Skrishevsky, Yu.A.; Vakhnin, A.Yu.; Skrishevsky, V.A.; Gavrilchenko, I.V.; Tretyak, O.V. (Functional Materials, 2006)
    Luminescence spectra of carbazole, diphenylamine, tri-p-tolylamine and N,N'-diphenyl- N,N'-bis(3-methylphenyl)-(1,1'-diphenyl)-4,4'-diamine solutions in toluene and various polymer matrices have been studied ...
  • Electrical properties of MIS structures with silicon nanoclusters 
    Bunak, S.V.; Ilchenko, V.V.; Melnik, V.P.; Hatsevych, I.M.; Romanyuk, B.N.; Shkavro, A.G.; Tretyak, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The theoretical and experimental investigations of electrical properties of the Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally ...
  • Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 
    Bunak, S.V.; Buyanin, A.A.; Ilchenko, V.V.; Marin, V.V.; Melnik, V.P.; Khacevich, I.M.; Tretyak, O.V.; Shkavro, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have been carried out. The influence of Si cluster growth ...
  • Self-consistent model of strong coupling theory of electron correlations in disordered crystals 
    Repetsky, S.P.; Tretyak, O.V.; Vyshivanaya, I.G.; Shastun, V.V. (Успехи физики металлов, 2012)
    The method of the description of electron correlations in the disordered crys-tals based on a Hamiltonian of many-particle system as well as the diagram technique for calculation of Green’s functions are developed.
  • Spin-dependent current in silicon p-n junction diodes 
    Tretyak, O.V.; Kozonushchenko, O.I.; Krivokhizha, K.V.; Revenko, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface ...
  • Synthesis of charged silica films of porous structure 
    Zharkikh, Yu.S.; Lysochenko, S.V.; Pylypenko, O.A.; Tretyak, O.V. (Functional Materials, 2008)
    A new technique has been proposed to obtain thin charged dielectric silica films with porous structure on a Si surface. The film composition and charge state of the dielectric/semiconductor system obtained have been studied. ...