Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Lytvyn, O.S.; Lytvyn, P.M.; Vlaskina, S.I.; Agueev, O.A.; Svetlichny, A.I.; Soloviev, S.I.; Sudarshan, T.S.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier ...