Перегляд за автором "Stronski, A.V."

Сортувати за: Порядок: Результатів:

  • Fourier Raman spectroscopy studies of the As₄₀S₆₀-xSex glasses 
    Stronski, A.V.; Vlček, M.; Oleksenko, P.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The present paper is concerned with the investigations of As₄₀S₆₀-xSex glasses with the help of Fourier Raman spectroscopy. The results of Raman spectroscopy investigations indicate increased presence of non-stoichiometric ...
  • Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication 
    Stronski, A.V.; Vlcek, M.; Shepeliavyi, P.E.; Sklenar, A.; Kostyukevich, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The present paper is concerned with investigations of image formation properties of As₄₀S₂₀Se₄₀ thin layers. Spectral dependence of the refraction index, n, of variously treated (virgin, exposed, annealed) samples was ...
  • Mid-IR impurity absorption in As₂S₃ chalcogenide glasses doped with transition metals 
    Paiuk, A.P.; Stronski, A.V.; Vuichyk, N.V.; Gubanova, A.A.; Krys’kov, Ts.A.; Oleksenko, P.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Room temperature IR impurity absorption spectra in 1 4000 7000 cm ( 4.1 - 25um ) region for chalcogenide glasses of As₂S₃ doped with chromium (0.5, 1 wt.%) and manganese (0.1, 1, 2, 5 wt.%) have been studied. The effects ...
  • Optical properties and structure of As-Ge-Se thin films 
    Tolmachov, I.D.; Stronski, A.V.; Vlcek, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅ have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk ...
  • Optical properties of AlN/n-Si(111) films obtained by method of HF reactive magnetron sputtering 
    Zayats, M.S.; Boiko, V.G.; Gentsar, P.O.; Vuichyk, M.V.; Lytvyn, O.S.; Stronski, A.V. (Functional Materials, 2010)
  • Optical properties of Ge-As-S thin films 
    Tolmachov, I.D.; Stronski, A.V. (Functional Materials, 2009)
    Thin Ge-As-S films have been prepared by thermal vacuum evaporation. Optical parameters and thickness values of the films have been calculated basing on transmission spectra. The dispersion dependences of the refractive ...
  • Optical properties of quantum-sized structures and two-dimensional photon crystals fabricated in semiconductor substrates using irreversible giant modification 
    Kamuz, A.M.; Oleksenko, P.F.; Kamuz, O.A.; Ilin, O.A.; Stronski, A.V. (Functional Materials, 2008)
    It is known that using the irreversible giant modification, it is possible to change locally the refractive index of semiconductors. This work is concerned with the development of the methods of photonic crystal formation ...
  • Photoluminescence of As₂S₃ doped with Cr and Yb 
    Stronski, A.V.; Paiuk, O.P.; Strelchuk, V.V.; Nasieka, Iu.M.; Vlček, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The results of experimental researches of photoluminescence spectra in As₂S₃ glasses obtained by doping of Cr and Yb ions to As–S host matrix followed by Raman and calorimetric studies as well as low-temperature magnetization ...
  • Raman scattering in sulphide glasses 
    Tolmachov, I.D.; Stronski, A.V.; Pribylova, H.; Vlček, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Raman spectra of two ternary glasses of composition Ge₅As₃₇S₅₈ and As₄Ge₃₀S₆₆ have been investigated. An influence of addition of third element on the spectra of binary glasses has been studied by comparison with spectra ...
  • Raman spectra of Ag- and Cu- photodoped chalcogenide films 
    Stronski, A.V.; Vlcek, M.; Stetsun, A.I.; Sklenar, A.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Raman spectra of the chalcogenide vitreous layers (As₄₀S₆₀, As₄₀S₄₀Se₂₀, As₄₀Se₆₀ ) non-doped and photodoped by Ag, Cu were measured. The spectra were analyzed in terms of a molecular model. It was ascertained, that for ...
  • Some peculiarities of the mechanism of irreversible photostructural transformations in thin As-S-Se layers 
    Stronski, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The present paper is concerned with the peculiarities of the mechanism of irreversible photostructural transformations in As-S-Se layers. The starting point of the irreversible photostructural transformations is the state ...
  • Structural properties of chalcogenide glasses As₂Se₃ doped with manganese 
    Paiuk, O.P.; Revutska, L.O.; Stronski, A.V.; Gudymenko, A.Yo.; Stanchu, H.V.; Gubanova, A.A.; Kryskov, Ts.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The paper presents the results of studying structural properties inherent to chalcogenide glasses doped with manganese. Investigations of the structure were carried out using Raman spectroscopy and X-ray diffraction. The ...
  • Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements 
    Stronski, A.V.; Vlcek, M.; Kostyukevych, S.A.; Tomchuk, V.M.; Kostyukevych, E.V.; Svechnikov, S.V.; Kudryavtsev, A.A.; Moskalenko, N.L.; Koptyukh, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Thin vacuum-evaporated layers of As₄₀S₆₀-xSex composition are investigated using Raman spectroscopy from the viewpoint of thermo- and photostructural transformations in them. These transformations are considered as changes ...
  • Study of surface influence on the n-Ge(110) electroreflectance spectra and their polarization spectroscopy 
    Vlasenko, O.I.; Gentsar, P.O.; Stronski, A.V. (Functional Materials, 2009)
    The contribution of the real (preliminary chemically etched) (110) surface of n-Ge into electroreflectance effect (energy range 1.9-2.6 eV) basing on polarization anisotropy of electrooptical effect has been separated under ...