Babentsov, V.N.; Boyko, V.A.; Gasan-zade, S.G.; Shepelski, G.A.; Stariy, S.V.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
Dislocation-related defects induced by dislocation motion in p-CdTe were
studied. Generation of “fresh” dislocations from the indented point of the CdTe (100),
(110), and (111) surfaces at room temperatures was visualized ...