Перегляд за автором "Shutov, S.V."

Сортувати за: Порядок: Результатів:

  • Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing 
    Shutov, S.V.; Shtan’ko, A.D.; Kurak, V.V.; Litvinova, M.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching ...
  • Crystallization mechanism control during epitaxy from solution-melt 
    Baganov, Ye.O.; Shutov, S.V. (Functional Materials, 2006)
    Main problems appearing during heteroepitaxy from solution-melts and requirements to time-temperature profiles at the crystallization front have been considered. The substrate cooling possibility by gas feeding to the ...
  • Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase 
    Shutov, S.V.; Baganov, Ye.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in ...
  • Enhancing parameters of silicon varactors using laser gettering 
    Vikulin, I.M.; Litvinenko, V.N.; Shutov, S.V.; Maronchuk, A.I.; Demenskiy, A.N.; Glukhova, V.I. (Технология и конструирование в электронной аппаратуре, 2018)
    The authors investigate how and why defects influence the inverse characteristics of varactors. The paper presents experimental results on the effect laser gettering has on the electrical parameters of varactors. The ...
  • Radiative recombination through EL2 centers in selenium and cadmium single crystals doped gallium arsenide 
    Litvinova, M.B.; Shutov, S.V.; Shtan`ko, A.D.; Kurak, V.V. (Functional Materials, 2006)
    Influence of Cd and Se atoms on the quantum efficiency of photon emission through EL2 defects in gallium arsenide single crystals has been investigated. A comparative technique of impurity diffusion in vacuum and arsenic ...
  • Simulation of strain fields in GaSb/InAs heteroepitaxial system 
    Shutov, S.V.; Baganov, Ye.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network ...