Перегляд за автором "Semikina, T.V."

Сортувати за: Порядок: Результатів:

  • Diamond microcrystallites formation through the phase transition graphite→liquid→diamond 
    Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The paper presents the results of synthesizing the diamond microparticles (3 to 5 µm) in a spark discharge in hydrogen at the low pressure (100 Torr). The obtained growth rate ~5 µm/s is uniquely high. Our analysis of the ...
  • Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method 
    Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This paper presents the results of AFM, Raman, IR spectroscopy and ellipsometry of α-Si:Y films prepared by electron-beam evaporation. The influence of the type and temperature of substrates, as well as the evaporation ...
  • Optical and protective properties of different type diamond and diamond-like carbon films 
    Semikina, T.V.; Shmyryeva, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Comparative analyses of diamond and diamond like carbon film optical properties prepared by laser and chemical vapor deposition methods are represented in this work. It was obtained that DF and DLC films have optical ...
  • Optical properties of dielectric layers with CeO₂ 
    Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The polycrystalline thin films CeO₂, WO₃, amorphous complex films WO₃ + CeO₂ with content of CeO₂ in the powder 10, 15 and 20 %, and CeO₂ + Dy₂O₃ with content of Dy₂O3 in the powder 10, 15 and 20 % are obtained by vacuum ...
  • Surface polariton excitation in ZnO films deposited using ALD 
    Venger, E.F.; Melnichuk, L.Yu.; Melnichuk, A.V.; Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The conductive ZnO films deposited using atomic layer deposition (ALD) on the optical glass substrates were studied using the modified method of the disturbed total internal reflection within the range 400…1400 cm⁻¹ for ...
  • Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure 
    Bobrenko, Yu.N.; Pavelets, S.Yu.; Semikina, T.V.; Stadnyk, O.A.; Sheremetova, G.I.; Yaroshenko, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    A surface-barrier structure with the transparent p-Cu₁.₈S component was used to make thin-film polycrystalline n-CdTe-based solar converters. Cadmium telluride was grown on CdSe substrates using the quasi-closed volume ...
  • ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure 
    Semikina, T.V.; Mamykin, S.V.; Godlewski, M.; Luka, G.; Pietruszka, R.; Kopalko, K.; Krajewski, T.A.; Gierałtowska, S.; Wachnicki, L.; Shmyryeva, L.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated ...
  • ZnTe-based UV sensors 
    Pavelets, S.Yu.; Bobrenko, Yu.N.; Semikina, T.V.; Sheremetova, G.I.; Atdaiev, В.S.; Krulikovska, K.B.; Mazin, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTebased UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal ...