Krukovsky, S.I.; Zayachuk, D.M.; Rybak, O.V.; Mryhin, I.O.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed ...