Перегляд за автором "Movchan, S."

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  • Paraelectric properties of PbTe doped with Ga 
    Tetyorkin, V.; Movchan, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The static dielectric constant was investigated as a function of temperature and carrier concentration in In(Cu)/p-PbTe Schottky contacts. Single crystals of PbTe doped with Ga were used as substrates for preparation of ...
  • Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique 
    Movchan, S.; Sizov, F.; Tetyorkin, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF₂ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures ...