Перегляд за автором "Merabtine, N."

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  • Merabtine, N.; Khemissi, S.; Zaabat, M.; Belgat, M.; Kenzai, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional ...
  • Benbouza, M.S.; Kenzai-Azizi, C.; Merabtine, N.; Saidi, Y.; Amourache, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the ...
  • Belgat, M.; Merabtine, N.; Zaabat, M.; Kenzai, C.; Saidi, Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space ...
  • Boualleg, A.; Merabtine, N.; Benslama, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    These hexagonal arrays are becoming increasingly popular, especially for their applications in the area of wireless communications. The overall objective of this article has been to use the theoretical foundation developed ...
  • Merabtine, N.; Boualleg, A.; Benslama, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Reflector antennas are characterized by very high gains (30 dB and higher) and narrow main beams. They are widely used in satellite and line-of-sight microwave communications as well as in radar. Reflector antennas operate ...
  • Boualleg, A.; Merabtine, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Microstrip antennas are useful as antennas mounted on moving vehicles such as cars, planes, rockets, or satellites, because of their small size, light weight and low profile. Since its introduction in 1985, the features ...
  • Merabtine, N.; Amourache, S.; Bouaouina, M.; Zaabat, M.; Saidi, Y.; Kenzai, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present ...
  • Bousnane, Z.; Benslama, M.; Merabtine, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The “cold” causes superconductivity phenomenon, as a measurement process generating a phase transitions of the second order, and also permitting the rise of phenomenological parameters, but not allowing the stability of ...
  • Khemissi, S.; Merabtine, N.; Zaabat, M.; Kenzai, C.; Saidi, Y.; Amourache, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In the information sciences such as computer science, telecommunications, the treatment of signal or image transmission, the field effect components play an important role. In the frame of our work, we are interested in ...
  • Merabtine, N.; Bousnane, Z.; Benslama, M.; Boussaad, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Based on the consideration given by the Ginzburg-Landau (GL) theory according to the variational principle, we assume that the microscopic Gibbs function density given by [1] ∫VGsdV = ∫(Fs - 1/4pBH)dv must be stationary ...
  • Merabtine, N.; Amourache, S.; Saidi, Y.; Zaabat, M.; Kenzai, Ch. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. ...
  • Merabtine, N.; Benslama, M.; Benslama, A.; Sadaoui, Dj. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The failings bound to the deterioration of the components under irradiations are complex and numerous. This paper describes the different kinds of radiations present in the space as well as their interactions with the ...
  • Bousnane, Z.; Merabtine, N.; Benslama, M.; Bousaad, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The goal of this survey is to deduce the grandeurs, or the set of grandeurs, from which is derived simultaneously as a linear combination of densities of states, current density matrix and the reduced entropy, according ...
  • Bousnane, Z.; Merabtine, N.; Benslama, M.; Boussaad, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The quantum description of macroscopic behaviour seems requiring the existence of limits imposed by the consideration hold on the logical closure of the theory, according to this, the J.A. Wheeler black box [1] will act ...
  • Bousnane, Z.; Merabtine, N.; Benslama, M.; Bousaad, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The emergence of the superconducting state must obey to a variational principle representations, as considered in the classical schemes, the invariance of the extremum values, according to the use of thermodynamical ...