Перегляд за автором "Malovichko, E.A."

Сортувати за: Порядок: Результатів:

  • Karachevtseva, L.A.; Lytvynenko, O.A.; Malovichko, E.A.; Sobolev, V.D.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature ...
  • Karachevtseva, L.A.; Lytvynenko, O.A.; Malovichko, E.A.; Sobolev, V.D.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures ...