Перегляд за автором "Luth, H."

Сортувати за: Порядок: Результатів:

  • Optically controlled 2D tunnelling in GaAs delta-doped p-n junction 
    Vitusevich, S. A.; Forster, A.; Belyaev, A. E.; Glavin, B. A.; Indlekofer, K. M.; Luth, H.; Konakova, R. V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers ...
  • Ultra-high field transport in GaN-based heterostructures 
    Vitusevich, S.A.; Danylyuk, S.V.; Danilchenko, B.A.; Klein, N.; Zelenskyi, S.E.; Drok, E.; Avksentyev, A.Yu.; Sokolov, V.N.; Kochelap, V.A.; Belyaev, A.E.; Petrychuk, M.V.; Luth, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns ...