Kladko, V.P.; Safriuk, N.V.; Stanchu, H.V.; Kuchuk, A.V.; Melnyk, V.P.; Oberemok, A.S.; Kriviy, S.B.; Maksymenko, Z.V.; Belyaev, A.E.; Yavich, B.S.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
Dependence of deformation characteristics changing in superlattice (SL)
structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period
was studied in this work. The deformation state of SL and ...