Перегляд за автором "Karpenko, A.Ya."

Сортувати за: Порядок: Результатів:

  • Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide 
    Litovchenko, P.G.; Wahl, W.; Groza, A.A.; Dolgolenko, A.P.; Karpenko, A.Ya.; Khivrych, V.I.; Litovchenko, O.P.; Lastovetsky, V.F.; Sugakov1, V.I.; Dubovy, V.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of ...
  • Seebeck’s effect in p-SiGe whisker samples 
    Dolgolenko, A.P.; Druzhinin, A.A.; Karpenko, A.Ya.; Nichkalo, S.I.; Ostrovsky, I.P.; Litovchenko, P.G.; Litovchenko, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval ...