Перегляд за автором "Gamov, D.V."

Сортувати за: Порядок: Результатів:

  • Formation of silicon nanoclusters in buried ultra-thin oxide layers 
    Oberemok, O.S.; Litovchenko, V.G.; Gamov, D.V.; Popov, V.G.; Melnik, V.P.; Gudymenko, O.Yo.; Nikirin, V.A.; Khatsevich, І.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for ...
  • Strain relaxation in thin Si₁-ₓ-yGeₓCy layers on Si substrates 
    Valakh, M.Ya.; Gamov, D.V.; Dzhagan, V.M.; Lytvyn, O.S.; Melnik, V.P.; Romanjuk, B.M.; Popov, V.G.; Yukhymchuk, V.O. (Functional Materials, 2006)
    The possibility to obtain a heterosystem consisting of the upper partially strained and lower relaxed layers by gradient in situ doping of SiGe layers with carbon is considered. The properties of the as-grown and annealed ...