Перегляд за автором "Dolgolenko, A.P."

Сортувати за: Порядок: Результатів:

  • Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons 
    Dolgolenko, A.P.; Varentsov, M.D.; Gaidar, G.P.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) × × 10¹² cm⁻³ ) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³ ) grown by the floating-zone technique after the irradiation by fast-pile neutrons at 287 ...
  • Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons 
    Dolgolenko, A.P.; Litovchenko, P.G.; Litovchenko, A.P.; Varentsov, M.D.; Lastovetsky, V.F.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Silicon n-type samples with resistivity ~2.5*10³ Ohm*cm grown by the method of a floating-zone in vacuum (FZ), in argon tmosphere (Ar) and received by the method of transmutation doping (NTD) are investigated before and ...
  • Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide 
    Litovchenko, P.G.; Wahl, W.; Groza, A.A.; Dolgolenko, A.P.; Karpenko, A.Ya.; Khivrych, V.I.; Litovchenko, O.P.; Lastovetsky, V.F.; Sugakov1, V.I.; Dubovy, V.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of ...
  • Peculiarities of charge carriers transport in submicron Si-Ge whiskers 
    Druzhinin, A.A.; Dolgolenko, A.P.; Ostrovskii, I.P.; Khoverko, Yu.N.; Nichkalo, S.I.; Kogut, Iu.R. (Functional Materials, 2014)
    The paper presents an analysis of impact of charge carriers transport mechanisms on the thermoelectric properties of Si-Ge submicron whiskers. Based on the resistance temperature dependences the value of activation energy ...
  • Seebeck’s effect in p-SiGe whisker samples 
    Dolgolenko, A.P.; Druzhinin, A.A.; Karpenko, A.Ya.; Nichkalo, S.I.; Ostrovsky, I.P.; Litovchenko, P.G.; Litovchenko, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval ...
  • The annealing of high - level doped materials on the base of the n – and p – Si₀.₇ Ge₀.₃ solid solution under reactor irradiation 
    Dolgolenko, A.P. (Вопросы атомной науки и техники, 2006)
    N- and p-type samples of Si-Ge solid solution with the resistivity of (4...7) 10⁻³⋅ Ohm·cm, unannealed after high-temperature baking have been investigated. Samples were irradiated up to the fluence ~10²⁰ n⁰·cm⁻² in ...
  • The kinetic of point defect transformation during the annealing process in electron-irradiated silicon 
    Gaidar, G.P.; Dolgolenko, A.P.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The A-centers (VO) annealing and transformation of precursors to form stable СiОi defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with ...
  • The radiation hardness of pulled silicon doped with germanium 
    Dolgolenko, A.P.; Gaidar, G.P.; Varentsov, M.D.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The radiation hardness of Czochralski grown n-type silicon samples doped with germanium (NGe = 2×10²⁰ cm⁻³) and without it was investigated after irradiation by fast neutrons. The dependence of the effective carrier ...