Перегляд за автором "Amourache, S."

Сортувати за: Порядок: Результатів:

  • Active inductances controlled in GaAs MESFET technology 
    Benbouza, M.S.; Kenzai-Azizi, C.; Merabtine, N.; Saidi, Y.; Amourache, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the ...
  • An improved contribution to optimize Si and GaAs solar cell performances 
    Merabtine, N.; Amourache, S.; Bouaouina, M.; Zaabat, M.; Saidi, Y.; Kenzai, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present ...
  • Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs 
    Khemissi, S.; Merabtine, N.; Zaabat, M.; Kenzai, C.; Saidi, Y.; Amourache, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In the information sciences such as computer science, telecommunications, the treatment of signal or image transmission, the field effect components play an important role. In the frame of our work, we are interested in ...
  • New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET 
    Merabtine, N.; Amourache, S.; Saidi, Y.; Zaabat, M.; Kenzai, Ch. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. ...