Pressure-induced structural transformations in Si:V and Si:V, Mn

Abstract

Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new results on structure-related properties of single crystalline Si implanted at 200 keV with V⁺ as well as that co-implanted additionally with Mn⁺ ions (Si:V, Mn), with dosages DV⁺ ≤ 5·10¹⁵ cm⁻² and DMn⁺ = 1·10¹⁵ cm⁻². The samples were processed for 1–5 h at HT ≤ 1270 K under HP ≤ 1.1 GPa. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy, X-ray and related methods were applied for sample characterization. The HT- (HP) treatment affects, among others, solid phase epitaxial re-growth (SPER) of amorphous silicon created at implantation and distribution of implanted species.