Chroneos, A.I.; Goulatis, I.L.; Vovk, R.V.; Zavgorodniy, A.A.; Obolenskii, M.A.; Petrenko, A.G.; Samoilov, A.V.
(2009)
We report the results of defect structures studies of silicon implanted at different temperatures with Mn ions (Si:Mn) and of GaMnAs layers, next annealed under ambient and high pressures. An influence of annealing conditions ...