Localized hole states in La₂СиО₄₊δ

dc.contributor.author	Rubin, P.
dc.contributor.author	Sherman, A.
dc.date.accessioned	2021-02-03T18:19:45Z
dc.date.available	2021-02-03T18:19:45Z
dc.date.issued	1996
dc.identifier.citation	Localized hole states in La₂CuO₄₊δ / P. Rubin, A. Sherman // Физика низких температур. — 1996. — Т. 22, № 5. — С. 543-546. — Бібліогр.: 9 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/176132
dc.description.abstract	Bound hole states induced by excess oxygen in La₂СиО₄₊δ are studied in the framework of the extended Hubbard model with the use of the spin-wave approximation. It is shown that the bound states are subdivided into two groups connected with different perturbations introduced by the excess oxygen in an antiferromagnetically ordered crystal. We interpret the two-band structure of the impurity reflectivity spectrum as a manifestation of these two groups of bound states. Calculated binding energies are in agreement with experiment.	uk_UA
dc.description.sponsorship	This work was supported by the Estonian Science Foundation under Grants ETF-67 and ETF-349.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	Специальный выпуск Международная конференция "Сверхпроводимость. Физические аспекты"	uk_UA
dc.title	Localized hole states in La₂СиО₄₊δ	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA