Berkutov, I.B.; Andrievskii, V.V.; Kolesnichenko, Yu.A.; Komnik, Yu.F.; Mironov, O.A.
(Физика низких температур, 2018)
The charge carrier overheating effect was studied in the p-type Si₀.₄Ge₀.₆/Ge/Si₀.₄Ge₀.₆ heterostructure with two subband occupy. The temperature dependences of hole-phonon relaxation time τh-ph at weak magnetic fields ...