Proximity phenomena in double-barrier structure NbZr/NbOₓ/Al/AlOy/NbZr

dc.contributor.author	Plecenik, A.
dc.contributor.author	Gazi, S.
dc.contributor.author	Zuzcak, M.
dc.contributor.author	Benacka, S.
dc.contributor.author	Shaternik, V.
dc.contributor.author	Rudenko, E.
dc.date.accessioned	2018-06-19T18:54:52Z
dc.date.available	2018-06-19T18:54:52Z
dc.date.issued	1999
dc.identifier.citation	Proximity phenomena in double-barrier structure NbZr/NbOₓ/Al/AlOy/NbZr / A. Plecenik, S. Gazi, M. Zuzcak, S. Benacka, V. Shaternik, E. Rudenko // Физика низких температур. — 1999. — Т. 25, № 10. — С. 1082-1086. — Бібліогр.: 7 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/139060
dc.description.abstract	A tunneling structures NbZr/NbOₓ/Al/AlOy/NbZr with a thin barrier in the NbZr/NbOₓ/Al junction and 4 to 6-nm-thick Al interlayer were prepared and studied experimentally. A proximity effect between NbZr and Al through NbOₓ barrier has been observed. An electrical voltage was generated in the NbOx barrier and a coexistence of the proximity effect and applied voltage in the junction NbZr/NbOₓ/Al has been observed. This experiment could be described on the basis of a model for coherent charge transport in superconducting/normal proximity structures.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	Низкоразмерные и неупорядоченные системы	uk_UA
dc.title	Proximity phenomena in double-barrier structure NbZr/NbOₓ/Al/AlOy/NbZr	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA