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dc.contributor.author Alizadeh, M.
dc.contributor.author Degoda, V.Ya.
dc.contributor.author Kozhushko, B.V.
dc.contributor.author Pavlova, N.Yu.
dc.date.accessioned 2018-06-16T15:24:52Z
dc.date.available 2018-06-16T15:24:52Z
dc.date.issued 2017
dc.identifier.citation Luminescence of Dipole-centers in ZnSe crystals / M. Alizadeh, V.Ya. Degoda, B.V. Kozhushko, N.Yu. Pavlova // Functional Materials. — 2017. — Т. 24, № 2. — С. 206-211. — Бібліогр.: 25 назв. — англ. uk_UA
dc.identifier.issn 1027-5495
dc.identifier.other DOI: https://doi.org/10.15407/fm24.02.206
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/136719
dc.description.abstract It is proposed a model of recombination luminescence center on which the two opposite mechanisms of recombination, electron and hole recombination, are implemented. Such a center of luminescence is observed in ZnSe crystals and causes the luminescence of a wide band with the maximum at about 1.92 eV (630 nm). It is performed comparison of some characteristics of this center with the characteristics of the center of luminescence which is a point defect and provides the maximum at of 1.27 eV (970 nm). It is shown that the external electric field and temperature have different impacts on the intensity and spectral positions of the maxima of these bands. uk_UA
dc.language.iso en uk_UA
dc.publisher НТК «Інститут монокристалів» НАН України uk_UA
dc.relation.ispartof Functional Materials
dc.subject Characterization and properties uk_UA
dc.title Luminescence of Dipole-centers in ZnSe crystals uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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