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Photocurrent generation in single electron tunneling transistors
Репозиторій DSpace/Manakin
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Photocurrent generation in single electron tunneling transistors
Тема:
Низкоразмерные и неупорядоченные системы
Посилання:
Photocurrent generation in single electron tunneling transistors / O. Tageman // Физика низких температур. — 1999. — Т. 25, № 3. — С. 290-297. — Бібліогр.: 26 назв. — англ.
Підтримка:
We acknowledge financial support from the EU (MEL ARI Research project 22953 — CEIARGE), from the Swedish Research Council for Engineering Sciences (TFR) and from Ericsson Microwave Systems AB. We are greatful to L. Y. Gorelik who proposed the problem and who has contributed in discussion. Also Peter Wahlgren and Mats Jonson are acknowledged for helpful discussions.
Дата:
1999
Переглядів:
572
Завантажень:
410
Анотація:
A single-electron tunneling transistor (SET) with a non-equilibrium mode population in one of the leads is analyzed theoretically. We model transport through a dot coupled to a channel, both formed by gates from the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. The non-equilibrium mode population, which is induced by coherent THz-pumping in the channel, produces empty states below the Fermi level for electrons to tunnel into. A photocurrent arises, which is periodically saw-tooth peaked with respect to the voltage on a central gate. For intense THz-fields the peaks display plateaus that reflect the energy dependence of the mode population. We also predict a high-gain Vin/Vout transfer-characteristic, similar to that of a current biased SET.
