Laser ablation and photostimulated passivation of Cd₁₋ₓZnₓTe crystals

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Фізико-технічні та математичні науки
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Відділення фізико-технічних проблем матеріалознавства
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Functional Materials
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Functional Materials, 2012, том 19
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Functional Materials, 2012, № 3
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dc.contributor.author	Zagoruiko, Yu.A.
dc.contributor.author	Fedorenko, O.A.
dc.contributor.author	Khristyan, V.A.
dc.contributor.author	Kovalenko, N.O.
dc.contributor.author	Mateychenko, P.V.
dc.contributor.author	Dobrotvorskaya, M.V.
dc.contributor.author	Poluboyarov, A.A.
dc.date.accessioned	2018-06-14T18:59:40Z
dc.date.available	2018-06-14T18:59:40Z
dc.date.issued	2012
dc.identifier.citation	Laser ablation and photostimulated passivation of Cd₁₋ₓZnₓTe crystals / Yu.A. Zagoruiko, O.A. Fedorenko, V.A. Khristyan, N.O. Kovalenko, P.V. Mateychenko, M.V. Dobrotvorskaya, A.A. Poluboyarov // Functional Materials. — 2012. — Т. 19, № 3. — С. 385-389. — Бібліогр.: 20 назв. — англ.	uk_UA
dc.identifier.issn	1027-5495
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/135323
dc.description.abstract	Proposed is a new technology of passivation of Cd₁₋ₓZnₓTe crystals which comprises preliminary treatment of their surface by laser ablation aimed at removal of the disturbed surface-adjacent layer arising due to mechanical treatment (cutting, grinding, polishing) of the samples. Degradation of the spectrometric characteristics of the detectors after chemical etching is compared with their degradation caused by the proposed passivation method.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	НТК «Інститут монокристалів» НАН України	uk_UA
dc.relation.ispartof	Functional Materials
dc.subject	Technology	uk_UA
dc.title	Laser ablation and photostimulated passivation of Cd₁₋ₓZnₓTe crystals	uk_UA
dc.title.alternative	Лазерна абляція та фотостимульована пасивація кристалів Cd₁₋ₓZnₓTe	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA